Verfahren zur Herstellung eines Hochvolt-CMOS-Bauelementes und Bauelement,申请号DE20071040869-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Hochvolt-CMOS-Bauelementes und Bauelement
摘要
申请公布号	DE102007040869(B4)	申请公布日期	2009.08.06
申请号	DE20071040869	申请日期	2007.08.29
申请人	DONGBU HITEK CO. LTD.	发明人	KO, KWANG YOUNG
分类号	H01L21/336;H01L21/76;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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