| 摘要 |
<P>PROBLEM TO BE SOLVED: To satisfy both good recognition of a substrate by a processing device and prevention of reflection of exposure light in an exposure process. <P>SOLUTION: A substrate 10 applied to a wafer process comprises a quartz substrate 20 having a first major surface 20a and a second major surface 20b, a first film structure 30 including a first silicon nitride film 32, a first silicon oxide film 34 and a second silicon nitride film 36, and a second film structure 40 including a phosphorus doped polysilicon film 42, a second silicon oxide film 44, a first polysilicon film 46, a third silicon oxide film 48 and a second polysilicon film 49. <P>COPYRIGHT: (C)2009,JPO&INPIT |
