发明名称 STACKED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce warpage deformation of a semiconductor chip due to heat during use. SOLUTION: A stacked semiconductor device has a first semiconductor device 8 and a second semiconductor device 18 which are stacked. The first semiconductor layer 8 has a first silicon chip 2, a tape substrate 3, and a solder ball 7 as an external connection terminal. The first silicon chip 2 is mounted on the tape substrate 3 with an elastomer 4 interposed therebetween. The solder ball 7 is provided on the tape substrate 3. The second semiconductor device 18 has nearly the same structure with the first semiconductor substrate 8. The second semiconductor device 18 has a second silicon chip 12, a tape substrate 13, and a solder ball 17. The solder ball 17 is provided on the tape substrate 13 and connected to the tape substrate 3 of the first semiconductor device 8. The second silicon chip 12 is thicker than the first silicon chip 2. Consequently, the warpage deformation of the second semiconductor device 18 due to heat during use can be reduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009176885(A) 申请公布日期 2009.08.06
申请号 JP20080012816 申请日期 2008.01.23
申请人 ELPIDA MEMORY INC;HITACHI LTD 发明人 KATAGIRI MITSUAKI;TANIE HISAFUMI;KASHIWAMORI JUN;SASAKI MASARU;MORIYA HIROSHI
分类号 H01L25/10;H01L25/11;H01L25/18 主分类号 H01L25/10
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