PLASMA PROCESSING DEVICE

摘要

A plasma processing device of the type comprises an RF electrode which is made of a metal and is covered with a ceramic material at least at a portion of the metal exposed to a plasma. The RF electrode is so controlled that a discharge amount of a gas generated therefrom is in the range of 10-8 Torr.L/second to 10-6 Torr.L/second. To this end, the ceramic material is favorably made of a sintered ceramic material.