发明名称 INSULATING FILM AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]-[H]}/2<=1.0x1021 cm-3.
申请公布号 US2009194797(A1) 申请公布日期 2009.08.06
申请号 US20090358466 申请日期 2009.01.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIMIZU TATSUO;KOYAMA MASATO
分类号 H01L29/78;C09K3/00 主分类号 H01L29/78
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