THIN FILM TRANSISTOR

摘要

Provided is a thin film transistor, which is manufactured by coating process wherein film forming process is simple, and has a small variance of TFT characteristics. In the thin film transistor, a gate electrode is formed on a substrate, and an insulating thin film is formed on the gate electrode. The gate electrode is formed with a line width smaller than a channel length, and a cross-section has linear or curved lines forming a semicircular, semielliptical or a protruding structure. A plurality of the gate electrodes are arranged from a source electrode toward a drain electrode without being overlapped with each other.