| 摘要 |
<p>A method for manufacturing a magnetic device with an adequate processing precision without increasing the number of steps of removing a mask. A first mask layer (22) is formed of one kind selected from the group consisting of Ti, Ta, W, their oxides, and their nitrides over a magnetic layer (15). A second mask layer (23) is formed of Ru, or Cr on the first mask layer. A resist pattern (RM) is formed on the second mask layer. By using the resist pattern, the second mask layer is subjected to reactive ion etching using a reactive gas containing oxygen so as to form a second mask pattern (23A). By using the second mask pattern, the first mask layer is subjected to reactive ion etching using a reactive gas containing a halogen gas so as form a first mask pattern (22A). By using the first mask pattern, the magnetic layer is subjected to reactive ion etching using a reactive gas containing oxygen so as to from a magnetic pattern (15A).</p> |
