| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED chip excellent in light extracting efficiency which can be configured by subsequently laminating an n-type layer and a p-type layer on a substrate to form a laminate structure including a light emitting portion of pn-junction type. <P>SOLUTION: The GaN-based LED chip has an ohmic electrode 13 formed on the upper surface of the p-type layer 12-2, and an insulation protective film 14 for covering the upper surface of the p-type layer 12-2 around the ohmic layer 13. The side surface 12a of the laminate structure 12 is formed by dry etching, and at least a part thereof has a cross section formed by cutting the laminate structure at a plane perpendicular to a laminating direction is an uneven shape as a corrugated shape. <P>COPYRIGHT: (C)2009,JPO&INPIT |
