| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of suppressing separation of a metallic layer by improving adhesion between a silicide electrode with a low carbon content and the metallic layer formed thereon in a silicon carbide semiconductor device having the silicide electrode with the low carbon content. <P>SOLUTION: A transition metal is deposited in a contact on a silicon carbide substrate and heated to form a silicide electrode with a high carbon content. Further, the silicide electrode with the high carbon content is heated, and carbon and carbide contained in the silicide electrode with the high carbon content are deposited to obtain a silicide electrode 5 with a low carbon content. The deposited carbon, graphite solids 53, 54 and composite oxide 55 are removed. Further, the surface of the silicide electrode with the low carbon content is dipped into a mixed solution of nitric acid and sulfuric acid, a mixed solution of fuming nitric acid and sulfuric acid, or fuming nitric acid to remove a residue existing on the surface of the silicide electrode with the low carbon content. Then, an interconnection material 56 is formed on the surface of the silicide electrode with the low carbon content. <P>COPYRIGHT: (C)2009,JPO&INPIT |
