| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a static random access memory, which manufactures SRAM bit cells with improved performance and stability. SOLUTION: A static random access memory bit cell 300 which includes two path gate transistors 302, two pull-down transistors 304, and two pull-up transistors 306, is formed, and a silicon nitride film 308 is deposited on the whole surface of the cell. Then, a silicon nitride film 308 is formed on the pull-down transistor 304. Then, high-temperature annealing treatment is performed. Thereby, the region covered by the silicon nitride film 308 is recrystallized, and distortion is introduced. Then, the silicon nitride film 308 is removed. COPYRIGHT: (C)2009,JPO&INPIT
|
