发明名称 Substrate processing method and film forming method
摘要 A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.
申请公布号 US2009197352(A1) 申请公布日期 2009.08.06
申请号 US20090382343 申请日期 2009.03.13
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 UENO MASAAKI;SHIMADA MASAKAZU;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址