A gate stack structure. The structure includes (a) a semiconductor region and (b) a gate stack on top of the semiconductor region. The gate stack includes (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region and doped with a type of dopants. The structure further includes (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack. The diffusion barrier region (i) is sandwiched between the gate stack and the spacer oxide region and (ii) is in direct physical contact with both the first and second gate polysilicon regions, and (iii) comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.
申请公布号
EP1805798(A4)
申请公布日期
2009.08.05
申请号
EP20050812439
申请日期
2005.09.30
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
MARTIN, DALE, W.;SHANK, STEVEN, M.;TRIPLETT, MICHAEL, C.;TUCKER, DEBORAH, A.