| 摘要 |
A fuse circuit and a semiconductor memory device including the same are provided to improve the performance of a semiconductor memory device by repairing a defect cell stably. A first and a second program unit(120,140) are programmed in response to the program signal while outputting a first and a second signal. The first signal is increased before programming, and while a second signal is reduced before programming. A sensing circuit(160) generates a sensing output signal based on the first signal and the second signal. A first program unit comprises an E- fuse which is connected between the output node of the first signal and the first voltage terminal. A second program unit comprises a reference resistor and an anti-fuse.
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