SUBSTRATE PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus and a plasma processing method of substrate are provided to control the ion radical energy with the narrow energy band by increasing the radical species density which is appropriate for the processing of the circuit board. A chamber(21) maintains the vacuum condition inside a chamber. The first electrode(22) maintains the substrate processed on the major surface. A counter electrode(23) is arranged to face with the first electrode. The first feed port applies the high frequency power having 50MHz or the higher predetermined frequency to the first electrode. The second feed port applies the DC negative pulse to the first electrode. A controller(30) controls the turn on or the off of the first feed port at the predetermined timing.