METHOD OF MANUFACTURING HIGH DENSITY NONVOLATILE MEMORY BY USING LOW TEMPERATURE HIGH PRESSURE ANNEALING

摘要

A method for manufacturing a nonvolatile memory using the low temperature high pressure heating is provided to decrease the electric hysteresis phenomenon by removing traps in a blocking dielectric layer. A tunneling dielectric layer(110) is formed on a semiconductor substrate with a thermal oxide layer. A nitride layer(120) is formed on the tunneling dielectric layer. A blocking dielectric layer(130) is formed on the upper part of nitride layer with the dielectric of the high dielectric constant and a gate structure is formed. The high temperature annealing is performed to the gate structure. The low temperature high pressure heating is performed after the high temperature annealing.