| 摘要 |
PROBLEM TO BE SOLVED: To improve a trench insulated-gate semiconductor device in electrical properties by a method wherein space between adjacent insulated gates in a second region is set larger than that between adjacent insulated gates in a first region. SOLUTION: A p-type collector layer 2 (first semiconductor layer) is formed on the one surface of an n-type high-resistance base layer 1 (second semiconductor layer) through the intermediary of an n-type buffer layer 3 higher in impurity concentration than the n-type base layer 1. A p-type base layer 4 (third semiconductor layer) is formed on the other surface of the n-type base layer 1. Trench insulated-gate electrodes 7 (insulated gate) which are of the same shape and formed in stripes in the plan view are formed on the p-type base layer 4 so deep as to reach to the base layer 1. The trench insulated gates 7 are so provided that a narrow space La between the trench insulated gates 7 and a wide space Lb between the trench insulated gates 7 are alternately and repeatedly laid out, where the insulated gates 7 are buried deep in a groove which is so cut in the base layer 4 as to reach the n-type base layer 1, and the periphery of the insulated gates 7 is covered with an insulating film. |
