发明名称 |
INTERMEDIATE-BAND PHOTOSENSITIVE DEVICE WITH QUANTUM DOTS EMBEDDED IN ENERGY FENCE BARRIER |
摘要 |
A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material. |
申请公布号 |
EP2084755(A2) |
申请公布日期 |
2009.08.05 |
申请号 |
EP20070875015 |
申请日期 |
2007.11.06 |
申请人 |
THE TRUSTEES OF PRINCETON UNIVERSITY;THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
FORREST, STEPHEN, R.;WEI, GUODAN |
分类号 |
H01L31/052;H01L31/0352;H01L31/09;H01L31/18 |
主分类号 |
H01L31/052 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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