APPARATUS FOR MANUFACTURING POLY-SI THIN FILM

摘要

Poly-crystal silicon thin film manufacturing equipment is provided to enforce the crystallization in a short time by adhering closely the current source terminal to the upper side both end parts of the conductive film. A top silicon dioxide substrate and an amorphous silicon thin film(12) are laminated on a bottom silicon dioxide substrate(11). A conductive film(14) is formed on a top silicon dioxide substrate(13). The amorphous silicon thin film is crystallized by the electric field and the joule heating. A current source terminal(110) is contacted to the upper side both end parts of the conductive film, and supplies the power source to the conductive film. A supporting member(120) supports the substrate flexibly. The supporting member is adhered closely to the upper side both end parts of the conductive film in order to form the uniform electric field on the conductive film. The supporting member is the elastic member.