发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE |
摘要 |
<p>There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).</p> |
申请公布号 |
EP2085823(A1) |
申请公布日期 |
2009.08.05 |
申请号 |
EP20070829709 |
申请日期 |
2007.10.12 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
TAKEI, SATOSHI;NAKAJIMA, MAKOTO;SAKAIDA, YASUSHI;IMAMURA, HIKARU;HASHIMOTO, KEISUKE;KISHIOKA, TAKAHIRO |
分类号 |
G03F7/11;G03F7/075;G03F7/09;H01L21/027;H01L21/033;H01L21/311 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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