A nitride semiconductor light emitting device is provided to prevent the leakage of electrons by forming an electron shielding layer for shielding the electrons. An active layer is formed into the multiple quantum wells between the p-type and n-type nitride semiconductor layers. An electron shielding layer(160) is formed between the active layer and the p-type nitride semiconductor layer. The electron shielding layer includes the first p-type the nitride layer(161), the second p-type the nitride layer(162), the third p-type the nitride layer(163) and the fourth p-type the nitride layer(164). The electron shielding layer prevents the leakage of electrons and increases the injection ratio of hole. The second p-type nitride layer is formed on the top of the first p-type nitride layer. The third p-type nitride layer is made of the p-type nitride including Al. The fourth p-type nitride layer is formed on the top of the third p-type nitride layer.
