发明名称
摘要 A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
申请公布号 JP4308485(B2) 申请公布日期 2009.08.05
申请号 JP20020198125 申请日期 2002.07.08
申请人 发明人
分类号 H01L21/316;H01L21/8246;H01L21/02;H01L27/105;H01L27/108 主分类号 H01L21/316
代理机构 代理人
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