Method for manufacturing n-type and p-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same
摘要
申请公布号
EP2068368(A3)
申请公布日期
2009.08.05
申请号
EP20080170842
申请日期
2008.12.05
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
