OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

An oxide semiconductor transistor and a manufacturing method thereof are provided to increase the driving current by forming gates at the upper and lower parts of channel layer. A channel layer(116) is made of an oxide semiconductor. The first gate insulating layer(110) is formed between the channel layer and the first gate(112). The second gate insulating layer(120) is formed between the channel layer and the second gate(122). The first gate insulating layer and the second gate insulating layer are made of the different material. The first gate insulating layer is made of the material not including the oxygen. The second gate insulating layer is made of the material including the oxygen.