PLATED MATERIAL HAVING METAL THIN FILM FORMED BY ELECTROLESS PLATING, AND METHOD FOR PRODUCTION THEREOF

摘要

Disclosed is a plated material, on which an ultrafine wiring can be formed by electroless plating, which has a thin seed layer having a uniform thickness, and which can eliminate the complication of forming two layers (i.e., a barrier layer and a catalyst metal layer) prior to the formation of the seed layer. Also disclosed is a method for producing the plated material. Specifically disclosed is a plated material which comprises: a base; an alloy thin film formed on the base, wherein the alloy is made of a metal (A) having a catalytic activity for electroless plating and a metal (B) capable of displacement plating with a metal ion contained in an electroless plating solution; and a metal thin film formed on the alloy thin film by electroless displacement and reductive plating. The alloy thin film made of the metal (A) having the catalytic activity and the metal (B) capable of displacement plating contains the metal (A) in an amount of 5 to 40 at.% (inclusive). The metal thin film formed by electroless displacement and reductive plating has a thickness of 10 nm or less and a resistivity of 10 muOmega cm or less. Preferably, the metal (B) has a barrier function against a metal contained in the metal thin film. ® KIPO & WIPO 2009