发明名称 |
Nonvolatile programmable resistor memory cell |
摘要 |
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
|
申请公布号 |
US7569459(B2) |
申请公布日期 |
2009.08.04 |
申请号 |
US20060427820 |
申请日期 |
2006.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KARG SIEGFRIED F;MEIJER GERHARD INGMAR |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|