MANUFACTURING METHOD OF SELECTIVE NANO-STRUCTURES

摘要

A method for fabricating selective nanostructure is provided to etch a substrate using only softening hydrogen gas in order for GaN nanostructure to grow on the etched portion of the substrate, thereby simplifying a process and reducing a manufacturing cost. A method for fabricating selective nanostructure comprises the following step of mounting a substrate in a nanostructure manufacturing device and injecting a hydrogen chloride gas so as to etch the substrate partially. The substrate(200A) etched by the hydrogen chloride gas is heated up to 700~1200‹C so that GaN nanostructure grows on the etched portion of the substrate. The substrate represents SiC, Si or GaAs.