发明名称 Device and method of manufacture for a low noise junction field effect transistor
摘要 A microelectronic product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.
申请公布号 US7569874(B2) 申请公布日期 2009.08.04
申请号 US20060521260 申请日期 2006.09.13
申请人 INTEL CORPORATION 发明人 SCHMIDT DOMINIK J.
分类号 H01L29/80 主分类号 H01L29/80
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