发明名称 |
Transistor having tensile strained channel and system including same |
摘要 |
A transistor structure and a system including the transistor structure. The transistor structure comprises: a substrate including a first layer comprising a first crystalline material; a tensile strained channel formed on a surface of the first layer and comprising a second crystalline material having a lattice spacing that is smaller than a lattice spacing of the first crystalline material; a metal gate on the substrate; a pair of sidewall spacers on opposite sides of the metal gate; and a source region and a drain region on opposite sides of the metal gate adjacent a corresponding one of the sidewall spacers.
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申请公布号 |
US7569869(B2) |
申请公布日期 |
2009.08.04 |
申请号 |
US20070729564 |
申请日期 |
2007.03.29 |
申请人 |
INTEL CORPORATION |
发明人 |
JIN BEEN-YIH;CHAU ROBERT S.;DATTA SUMAN;KAVALIEROS JACK T.;RADOSAVLIEVIC MARKO |
分类号 |
H01L29/737;H01L29/778 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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