| 摘要 |
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10-25 mum and more particularly 15-18 mum, or a frequency ranging from 12-30 THz and more particularly 16.5-20 THz.
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