Thin film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus

摘要

A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.