发明名称 Method and system for correcting a mask pattern design
摘要 A pattern verification method includes preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, and computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges. The positional displacement is a displacement between first point and the evaluation point. The method further includes computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.
申请公布号 US7571417(B2) 申请公布日期 2009.08.04
申请号 US20040012494 申请日期 2004.12.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IZUHA KYOKO;NOJIMA SHIGEKI;KOTANI TOSHIYA;TANAKA SATOSHI
分类号 G03F1/08;G06F17/50;G03F1/14;G03F1/36;G03F1/68;G03F1/70;G03F7/20;G03F9/00;H01L21/027 主分类号 G03F1/08
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