| 摘要 |
In a method for manufacturing a semiconductor device having a dual damascene structure, a semiconductor substrate formed by stacking a trench mask and a via hole resist mask on an insulating film is loaded into a processing chamber, and a via hole is formed by etching the insulating film through the via hole resist mask. Then, the via hole resist mask is removed by an ashing process and a protective film is formed on an underlayer of the insulating film; Thereafter, a trench is formed by etching the insulating film through the trench mask, and the semiconductor substrate is unloaded from the processing chamber after the via hole forming step, the resist mask removing step, the protective film forming step and the trench forming step are completed in the processing chamber.
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