| 摘要 |
A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist pattern over an etch target layer, forming a first hard mask layer over a substrate structure, planarizing the first hard mask layer to form a first hard mask pattern and expose the first photoresist pattern, removing the first photoresist pattern, forming a second photoresist pattern enclosing the first hard mask pattern, forming a second hard mask layer over the substrate structure, planarizing the second hard mask layer to form a second hard mask pattern and expose the first hard mask pattern, removing the second photoresist pattern, and etching the etch target layer using the first hard mask pattern and the second hard mask pattern.
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