发明名称 |
Method of managing fails in a non-volatile memory device and relative memory device |
摘要 |
A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.
|
申请公布号 |
US7571362(B2) |
申请公布日期 |
2009.08.04 |
申请号 |
US20060557786 |
申请日期 |
2006.11.08 |
申请人 |
PELLICONE DEMETRIO;CORSI ADAMO;ROVEDA MARCO;DI TUORO CONCETTA;CARANNANTE PROCOLO;FERRANTE GIANFRANCO |
发明人 |
PELLICONE DEMETRIO;CORSI ADAMO;ROVEDA MARCO;DI TUORO CONCETTA;CARANNANTE PROCOLO;FERRANTE GIANFRANCO |
分类号 |
G01C29/00 |
主分类号 |
G01C29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|