发明名称 |
Semiconductor device and manufacture method thereof |
摘要 |
An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings. The island-shaped semiconductor layer includes embedded semiconductor layers and a thin film semiconductor layer. The embedded semiconductor layers have a larger thickness than that of the thin film semiconductor layer.
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申请公布号 |
US7569886(B2) |
申请公布日期 |
2009.08.04 |
申请号 |
US20080031881 |
申请日期 |
2008.02.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MATSUKURA HIDEKI |
分类号 |
H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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