发明名称 Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer
摘要 A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, both the first transistor and the second transistor are made of portions of the same structure.
申请公布号 US7569910(B2) 申请公布日期 2009.08.04
申请号 US20060514090 申请日期 2006.08.30
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 CHANG MAUCHUNG (FRANK);CHOW PEIMING (DANIEL);ZHANG LIYANG
分类号 H01L29/732;H01L21/8224;H01L29/735;H01L29/737 主分类号 H01L29/732
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