发明名称 |
Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer |
摘要 |
A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, both the first transistor and the second transistor are made of portions of the same structure.
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申请公布号 |
US7569910(B2) |
申请公布日期 |
2009.08.04 |
申请号 |
US20060514090 |
申请日期 |
2006.08.30 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
CHANG MAUCHUNG (FRANK);CHOW PEIMING (DANIEL);ZHANG LIYANG |
分类号 |
H01L29/732;H01L21/8224;H01L29/735;H01L29/737 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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