MANUFACTURING METHOD OF NANO-STRUCTURES AT LOW TEMPERATURE BY CONTROLLING FLOW OF HCL GAS

摘要

A method for fabricating a GaN nanostructure at low temperature is provided to inject HCl of 40sccm or less into a Group III element container where gallium(Ga) is included in order to manufacture high quality of GaN nanostructure even at low temperature. A method for fabricating a GaN nanostructure at low temperature comprises the following steps of: injecting HCl of 40sccm or less into a Group III element container(130) while injecting NH3 gas containing Group V elements; and fabricating the GaN nanostructure on a parent substrate in a GaN nanostructure manufacturing device. The flow of HCl gas is controlled to less than 40sccm. The HCl gas is supplied to a Ga element placed in the Group III element container. The temperature of the substrate is maintained to 300 ~ 400‹C. The temperature of the Group III element container is maintained to 400 ~ 600‹C.