MANUFACTURING METHOD OF NANO-STRUCTURES AT LOW TEMPERATURE USING INDIUM

摘要

A method for fabricating a nanostructure from indium is provided to use gallium and indium together as a source and to react to HCl in order to lower the temperature of a substrate and a Ga container. A method for fabricating a nanostructure from indium comprises the following steps of: putting gallium and indium in a Group III element container(140) of a GaN nanostructure manufacturing device; and growing the GaN nanostructure on a substrate. The mixing ratio of the gallium and indium is 3 to 2. The reaction gas supplied into the GaN nanostructure manufacturing device represents HCl, HN3, nitrogen(N2), hydrogen(H2) and argon(Ar).