NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A non-volatile memory device and manufacturing method thereof are provided to reduce the change of the electrical feature of diode by controlling the temperature profile of the silicon. The bottom electrode(102) is formed on the substrate(101). The first amorphous silicon layer(103) is formed in the upward of the bottom electrode. The second amorphous silicon layer(104) is formed on the first amorphous silicon layer. Laser is irradiated in the surface of the second amorphous silicon layer. In the process of the laser irradiation, the laser is irradiated so that the first area of which temperature is temporally high and the second part of which temperature is relatively low within the second amorphous silicon layer.