发明名称 REFLOW METHOD, PATTERN-FORMING METHOD, AND METHOD FOR MANUFACTURING TFT
摘要 <p>There is prepared an object to be processed which has a foundation layer film and a resist film pattern-formed above the foundation layer film in such a manner that there are an exposed region where the foundation layer film is exposed and a covered region where the foundation layer film is covered. Then, the object to be processed is subjected to a surface modification treatment so that the exposed region of the foundation layer film is surface-modified to suppress fluxion of the resist. After this surface modification treatment, resist of the resist film is softened and flowed to partially cover the exposed region, and then etching is performed by using the flowed resist as a mask, thereby forming a certain pattern. ® KIPO & WIPO 2009</p>
申请公布号 KR20090083329(A) 申请公布日期 2009.08.03
申请号 KR20097005089 申请日期 2007.11.02
申请人 TOKYO ELECTRON LIMITED 发明人 ASOU YUTAKA;OMORI TSUTAE
分类号 H01L29/786 主分类号 H01L29/786
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