CRYSTALLIZATION METHOD OF AMORPHOUS SILICON THIN FILM

摘要

A crystallization method of amorphous silicon thin film is provided to control the diffusion rate of the nickel and the deformation and damage of substrate by crystallizing an amorphous silicon thin film in room temperature. The buffer layer is formed on the substrate(S101). The amorphous silicon thin film is formed on the buffer layer(S102). The assistant thin film is formed in the amorphous silicon thin film(S103). The metal-containing solution is provided on the assistant thin film and metal is coated on the assistant thin film(S104). The substrate in which metal is coated by the thermal process(S105). The metal coating and assistant thin film are removed(S106). The metal solution is the solution containing the nickel. The assistant thin film is the nitride thin film.