| 摘要 |
<p>A method for detecting inferior of photomask is provided to remove the step defect and prevent the damage of the mask film pattern surface by a carbon film. The mask film pattern(111) is formed on the substrate(100). The exposed substrate is etched with constant thickness by using the mask film pattern as the etching mask. The carbon(150) is formed in the entire substrate with the constant thickness. By using the detected quantity of light to the substrate, the step defect(141) is detected. The carbon is removed. In substrate, the repair process is performed to repair the step defect portion. The mask film pattern consists of the light block film pattern or the phase shift layer pattern.</p> |
