RESISTIVE MEMORY INCLUDING NANOPARTICLE AND FORMATION METHOD OF THE SAME

摘要

A resistive memory including nanoparticle and formation method of the same are provided to control location and density of the conductive pathway changing the resistance of the dielectric layer by controlling the size, location and density of conductive nano particles. The resistivity memory comprises the switching element and storage cell. The storage cell is the lower electrode(110). The dielectric layer(120) including a plurality of conductivity nano particles(122) is formed on the lower electrode, and stores the information according to the change of the resistive state. The upper electrode(130) is formed on the dielectric layer. A plurality of conductivity nano particles is formed in an interface between the upper electrode and the dielectric layer and between the lower electrode and dielectric layer. The dielectric layer comprises the transition metal oxide. A plurality of conductivity nano particles has the size of 10Š ~ 200Š.