THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND FLEXIBLE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR

摘要

A thin film transistor, method of manufacturing the thin film transistor and flexible display device having the thin film transistor are provided to prevent the damage of a thin film and reduce tact time by forming a gate electrode by using a carbon nanotube of ductility. The gate electrode(12) made of the carbon nanotube of conductivity is formed on a flexible printed circuit board(10). The gate insulating layer(14) is coated on the upper portion including the gate electrode. The semiconductor layer(16) having a channel region, and a source and drain region is formed on the gate insulating layer. A metal is printed to contact the source and drain region and then the source electrode(18a) and drain electrode(18b) are formed. The source electrode and drain electrode are made of a metal selected in the group consisting of gold(Au), and silver(Ag) and platinum(Pt).