| 摘要 |
<p>A pattern formation method using a TSI and a double patterning process for improving the definition of a process margin is provided to form a pattern less than 30 nm by using an ArF equipment and manufacture the semiconductor device. A pattern formation method of a semiconductor device applies a method for atomic layer deposition in a double patterning process as a top surface imaging process. An etched layer(13) is formed at the upper part of a semiconductor substrate(11). The photo-resist composition is coated with on the etched layer and the first photo-resist is formed. The method for atomic layer deposition is performed in the exposed first photo-resist and the titanium oxide film is formed on the exposure region or the non-exposure part. After the second photosensitive film is formed on the first photo-resist pattern upper, the second photosensitive pattern is taken shape in order not to overlap with the first photo-resist pattern.</p> |
