发明名称 |
FABRICATION METHOD OF THIN FILM TRANSISTOR, ETCHING SOLUTION COMPOSITION USED THE METHOD |
摘要 |
<p>A manufacturing method and an etchant composites used to a method of a thin film transistor for forming a taper profile with a superior linearity are provided to solve a problem such as the fault of the short or the wiring. A thin film transistor comprises a semiconductor layer(110), a gate insulating layer(115), a gate electrode(120), an inter-layer insulating film(125) and a source/drain electrode. The gate electrode and source/drain electrode comprise the copper layer. The gate electrode and source/drain electrode comprise the second additive 0.2~4 weight% and the water remaining amount including the first additive 0.2~4 weight%, and the nitrogen atom including the inorganic salt oxidizer 1~20 weight%.</p> |
申请公布号 |
KR20090082625(A) |
申请公布日期 |
2009.07.31 |
申请号 |
KR20080008495 |
申请日期 |
2008.01.28 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
SHIN, HYE RA;LEE, SUCK JUN;YOON, YOUNG JIN |
分类号 |
H01L29/78;H01L21/3063 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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