| 摘要 |
<p>An organic light emitting diode including a thin film transistor substrate and a manufacturing method thereof for simplifying a manufacturing process are provided to reduce the number of mask processes by patterning source and drain electrode, a first impurity layer and the second impurity layer. A thin film transistor substrate(110) comprises a plurality of thin film transistors(120) and a wiring area(130). A plurality of thin film transistors is arranged within the task pixel. The wiring area electrically connects a plurality of thin film transistors. A plurality of thin film transistors comprises a gate electrode, a gate insulating layer, a semiconductor layer, source and drain electrodes, and a first impurity layer. The gate electrode is formed in the top of the substrate into the desired pattern. The gate insulating layer is formed on substrate and gate electrode. The semiconductor layer is formed on the gate insulating layer. Source and drain electrode are formed on the semiconductor layer. The first impurity layer is formed between the source of the semiconductor layer, and source and drain electrode and drain region. The wiring area comprises the first conductive layer, the second conductive layer, and the second impurity layer. The first conductive layer is formed in the same layer as the gate electrode into the same material as the gate electrode. The second conductive layer is formed in the same layer as source and drain electrode into the same material as source and drain electrode. The second conductive layer connects through the contact hole with the first conductive layer. The second impurity layer is formed with the same material as the first impurity layer of the thin film transistor between the first conductive layer and the second conductive layer.</p> |
