| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem wherein the arrangement of a dummy pattern causes the increase of an area concerning the end part of a divided memory array. <P>SOLUTION: A circuit constituted in a Y1 string at the end part of the divided memory array is constituted of block selection transistors BT in the same shape as a memory cell transistor. Patterns in connection parts between main bit lines GB and sub bit lines LB are made to have the same shapes as the memory cells (Y2, Y3 strings), which makes the patterns uniform. Thus, the dummy pattern for generating the memory array is not required. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
