发明名称 CHEMICAL MECHANICAL POLISHING SYSTEM WITH STOPPING COMPOUND AND METHOD OF USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a system for polishing one or more layers of a multi-layer substrate that has a first metal layer and a second layer. SOLUTION: The system includes (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive for increasing the rate at which the system polishes at least one layer of the substrate, and (iv) a polishing pad and/or an abrasive. In the system, the polishing additive is selected from the group consisting of pyrophosphate, condensed phosphate, phosphonic acid and their salt, amine, amino alcohol, amide, imine, imino acid, nitrile, nitro, thiol, thioester, thioether, carbothiolic acid, thiocarboxylic acid, thiosalicylic acid, and their mixtures. In addition, a method of polishing a substrate includes steps of contacting a surface of a substrate with the system and polishing at least a portion of the substrate using the system. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170935(A) 申请公布日期 2009.07.30
申请号 JP20090102674 申请日期 2009.04.21
申请人 CABOT MICROELECTRONICS CORP 发明人 WANG SHUMIN;KAUFMAN VLASTA BRUSIC;GRUMBINE STEVEN K;ZHOU RENJIE;CHERIAN ISAAC K
分类号 B24B37/00;H01L21/304;B24B57/02;B24D11/00;C09G1/02;C09K3/14 主分类号 B24B37/00
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