| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which is made less in power consumption and fast without deteriorating charge holding characteristics. SOLUTION: The semiconductor storage device 1 has a tunnel insulation film 6, a charge storage layer 7, a block insulating film 8, and a control gate electrode 9 laminated on a surface of a semiconductor substrate 2. The charge storage layer 7 is formed with a nitrogen containing insulating film. Further, a dopant reducing trap density of electric charges moving in and out of the charge storage layer 7 through the tunnel insulating film 6 is introduced into a region 7a on the side of an interface with the tunnel insulation film 6, or introduced into the region 7a to higher density than into another region 7b. COPYRIGHT: (C)2009,JPO&INPIT
|
